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Samsung 990 Evo Plus 2TB NVMe M.2 Solid State Drive

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Samsung 990 Evo Plus 2TB NVMe M.2 Solid State Drive

Samsung 990 EVO Plus 2TB NVMe M.2 SSD - PCIe 4.0/5.0 Compatible

The Samsung 990 EVO Plus 2TB delivers sequential read speeds up to 7,250 MB/s and write speeds up to 6,300 MB/s. With PCIe 4.0 x4 and PCIe 5.0 x2 compatibility, this DRAMless drive uses Host Memory Buffer (HMB) technology and Samsung's efficiency-boosting nickel-coated controller for power-efficient high performance.

Key Features

  • Dual PCIe Compatibility - Works with both PCIe 4.0 x4 and PCIe 5.0 x2 interfaces
  • High-Speed Performance - Up to 7,250 MB/s read, 6,300 MB/s write
  • Samsung V-NAND TLC - Reliable 3D NAND flash memory technology
  • Power Efficient - 73% improved read and 68% improved write performance per watt vs 990 EVO
  • Intelligent TurboWrite 2.0 - Enlarged TurboWrite region for faster large data processing
  • Samsung Magician Software - Monitor drive health, update firmware, and optimize performance

Technical Specifications

Capacity 2TB (2,000GB)
Interface PCIe 4.0 x4 / PCIe 5.0 x2, NVMe 2.0
Form Factor M.2 2280
Controller Samsung in-house Controller (nickel-coated)
NAND Type Samsung V-NAND TLC
Cache HMB (Host Memory Buffer)
Sequential Read Up to 7,250 MB/s
Sequential Write Up to 6,300 MB/s

Power Consumption

Active Read (Avg.) 4.6W
Active Write (Avg.) 4.2W
Idle 5mW (typical)

 

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$143.55
Samsung 990 Evo Plus 2TB NVMe M.2 Solid State Drive—
$143.55

Product Information

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Description

Samsung 990 EVO Plus 2TB NVMe M.2 SSD - PCIe 4.0/5.0 Compatible

The Samsung 990 EVO Plus 2TB delivers sequential read speeds up to 7,250 MB/s and write speeds up to 6,300 MB/s. With PCIe 4.0 x4 and PCIe 5.0 x2 compatibility, this DRAMless drive uses Host Memory Buffer (HMB) technology and Samsung's efficiency-boosting nickel-coated controller for power-efficient high performance.

Key Features

  • Dual PCIe Compatibility - Works with both PCIe 4.0 x4 and PCIe 5.0 x2 interfaces
  • High-Speed Performance - Up to 7,250 MB/s read, 6,300 MB/s write
  • Samsung V-NAND TLC - Reliable 3D NAND flash memory technology
  • Power Efficient - 73% improved read and 68% improved write performance per watt vs 990 EVO
  • Intelligent TurboWrite 2.0 - Enlarged TurboWrite region for faster large data processing
  • Samsung Magician Software - Monitor drive health, update firmware, and optimize performance

Technical Specifications

Capacity 2TB (2,000GB)
Interface PCIe 4.0 x4 / PCIe 5.0 x2, NVMe 2.0
Form Factor M.2 2280
Controller Samsung in-house Controller (nickel-coated)
NAND Type Samsung V-NAND TLC
Cache HMB (Host Memory Buffer)
Sequential Read Up to 7,250 MB/s
Sequential Write Up to 6,300 MB/s

Power Consumption

Active Read (Avg.) 4.6W
Active Write (Avg.) 4.2W
Idle 5mW (typical)

 

Browse more Storage Devices at EasyPC.